Semiconductor structure having fin structures and method of manufacturing the same

ABSTRACT

The present disclosure provides a semiconductor structure having a fin structure and a method of manufacturing the semiconductor structure. The semiconductor includes a substrate defined with an active region. A first gate structure is disposed in the active region and includes a dielectric material. A second gate structure is disposed in the active region and includes the dielectric material. A fin structure having a first top surface is arranged to alternate with the first gate structure and the second gate structure. The first gate structure has a second top surface and the second gate structure has a third top surface. The second top surface and the third top surface are lower than the first top surface.

TECHNICAL FIELD

The present disclosure relates to a semiconductor structure and, moreparticularly, to a semiconductor structure having a fin structure and amethod of manufacturing the same.

DISCUSSION OF THE BACKGROUND

A buried word line is a structure formed in a dynamic random accessmemory (DRAM) to increase the integration degree of a transistor in acell, simplify a fabrication process, and improve a device property suchas a current leakage property. In general, a trench is formed and a wordline is buried in the trench to form a buried word line.

When forming buried word lines, an etch-back process is of greatsignificance since the etch-back process forms space in trenches fordepositing a conductive material. However, in a single etch-backprocess, the etching selectivity generally causes variations in heightsof the materials for forming the buried word lines.

Therefore, there is a need to improve the etch-back process for formingburied word lines.

This Discussion of the Background section is provided for backgroundinformation only. The statements in this Discussion of the Backgroundare not an admission that the subject matter disclosed in thisDiscussion of the Background section constitutes prior art to thepresent disclosure, and no part of this Discussion of the Backgroundsection may be used as an admission that any part of this application,including this Discussion of the Background section, constitutes priorart to the present disclosure.

SUMMARY

One aspect of the present disclosure provides a semiconductor structure.The semiconductor includes a substrate defined with an active region. Afirst gate structure is disposed in the active region and includes adielectric material. A second gate structure is disposed in the activeregion and includes the dielectric material. A fin structure having afirst top surface is arranged to alternate with the first gate structureand the second gate structure. The first gate structure has a second topsurface and the second gate structure has a third top surface. Thesecond top surface and the third top surface are lower than the firsttop surface.

In some embodiments, the third top surface is lower than the second topsurface.

In some embodiments, the second gate structure is deeper than the firstgate structure.

In some embodiments, the first gate structure and the second gatestructure have different diameters and different depths.

Another aspect of the present disclosure provides a method of forming asemiconductor structure. The method includes forming a gate trench and afirst fin structure adjacent to the gate trench in an active region of asubstrate; filling the gate trench with a dielectric material; forming afirst photoresist pattern on the active region; performing a firstetching process to partially remove the first fin structure to form asecond fin structure, wherein the second fin structure has a protrudingportion; forming a hard mask on the active region; and performing asecond etching process to remove a portion of the dielectric materialand the protruding portion of the second fin structure to form a thirdfin structure.

In some embodiments, the forming of the gate trench comprises forming afirst gate trench adjacent to a second gate trench, wherein the firstgate trench and the second gate trench are arranged along a firstdirection.

In some embodiments, the second gate trench is formed to be deeper thanthe first gate trench.

In some embodiments, the forming of the gate trench comprises formingthe first gate trench and the second gate trench to have differentdiameters and different depths.

In some embodiments, the performing of the first etching processcomprises forming a first recessed channel extending along the firstdirection.

In some embodiments, after the first etching process, a second height ofthe second fin structure is substantially less than a first height ofthe first fin structure.

In some embodiments, the formation of the hard mask comprises forming acap layer to cover the active region; forming a mask layer on the caplayer; forming an anti-reflective coating (ARC) layer on the mask layer;and forming a second photoresist pattern on the ARC layer.

In some embodiments, the mask layer is etched using the secondphotoresist pattern as an etching mask to form a mask pattern.

In some embodiments, the cap layer is etched using the mask pattern asan etching mask to form a cap pattern.

In some embodiments, the cap pattern and the mask pattern together formthe hard mask on the active region.

In some embodiments, the performing of the second etching processcomprises grinding the protruding portion of the second fin structure.

In some embodiments, after the second etching process, a third height ofthe third fin structure is substantially less than a second height ofthe second fin structure.

In some embodiments, the performing of the second etching processcomprises forming a second recessed channel extending along the firstdirection.

In some embodiments, the second recessed channel cuts through thedielectric material and the third fin structure.

In some embodiments, the second etching process uses an etching systemwhich employs a plasma with a bias power of 200 to 300 watts and anon-off frequency of 100 to 300 hertz.

In some embodiments, in the second etching process, a period ratio ofthe on and off states of the plasma is between 70:30 and 50:50.

The present disclosure provides a method of forming a fin structurehaving a substantially flat top surface after the first etch-backprocess and the second etch-back process. The first fin structure isprocessed by the first etch-back process to form a second fin structurehaving a top member including a hollow portion and a protruding portion.The protruding portion of the second fin structure prevents a third finstructure, formed after the second etch-back process, from beingrounded. The profile of the third fin structures of the presentdisclosure contributes to a desired electrical property of the buriedword line structures which will be subsequently formed.

The foregoing has outlined rather broadly the features and technicaladvantages of the present disclosure in order that the detaileddescription of the disclosure that follows may be better understood.Additional features and technical advantages of the disclosure will bedescribed hereinafter, and form the subject of the claims of thedisclosure. It should be appreciated by those skilled in the art thatthe conception and specific embodiment disclosed may be readily utilizedas a basis for modifying or designing other structures or processes forcarrying out the same purposes of the present disclosure. It should alsobe realized by those skilled in the art that such equivalentconstructions do not depart from the spirit and scope of the disclosureas set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic diagram showing an etching system, in accordancewith some embodiments of the present disclosure.

FIG. 2 is a top-view diagram of a DRAM device, in accordance with someembodiments of the present disclosure.

FIG. 3 is a schematic cross-sectional view of a comparative embodiment.

FIG. 4 is a schematic cross-sectional view of the comparative embodimentFIG. 3.

FIG. 5 is a schematic cross-sectional view of a semiconductor structure,in accordance with some embodiments of the present disclosure.

FIG. 6 is a flow diagram showing a method for fabricating thesemiconductor structure in FIG. 5, in accordance with some embodimentsof the present disclosure.

FIG. 7 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 8 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 9 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 10 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 11 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 12 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 13 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 14 is a schematic perspective view of another semiconductorstructure, in accordance with some embodiments of the presentdisclosure.

FIG. 15 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 16 is a schematic perspective view of the semiconductor structurein FIG. 14 after the first etch-back process, in accordance with someembodiments of the present disclosure.

FIG. 17 is a schematic cross-sectional view of the semiconductorstructure in FIG. 16, in accordance with some embodiments of the presentdisclosure.

FIG. 18 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 19 is a schematic cross-sectional view of the semiconductorstructure in FIG. 18, in accordance with some embodiments of the presentdisclosure.

FIG. 20 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 21 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 22 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 23 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 24 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 25 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 26 is a schematic cross-sectional view showing a sequentialfabrication stage according to the method in FIG. 6, in accordance withsome embodiments of the present disclosure.

FIG. 27 is a schematic perspective view of the semiconductor structurein FIG. 5, in accordance with some embodiments of the presentdisclosure.

DETAILED DESCRIPTION

Embodiments, or examples, of the disclosure illustrated in the drawingsare now described using specific language. It shall be understood thatno limitation of the scope of the disclosure is hereby intended. Anyalteration or modification of the described embodiments, and any furtherapplications of principles described in this document, are to beconsidered as normally occurring to one of ordinary skill in the art towhich the disclosure relates. Reference numerals may be repeatedthroughout the embodiments, but this does not necessarily mean thatfeature(s) of some embodiments apply to another embodiment, even if theyshare the same reference numeral.

It shall be understood that, although the terms first, second, third,etc. may be used herein to describe various elements, components,regions, layers or sections, these elements, components, regions, layersor sections are not limited by these terms. Rather, these terms aremerely used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of the present inventive concept.

The terminology used herein is for the purpose of describing particularexample embodiments only and is not intended to be limiting to thepresent inventive concept. As used herein, the singular forms “a,” “an”and “the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. It shall be further understood thatthe terms “comprises” and “comprising,” when used in this specification,point out the presence of stated features, integers, steps, operations,elements, or components, but do not preclude the presence or addition ofone or more other features, integers, steps, operations, elements,components, or groups thereof.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

An etching process generally uses an ionized gas (e.g., plasma) to etcha semiconductor stack. Plasma-etching processes are particularly usefulfor etching of multiple adjacent structures having fine features.However, with more stringent requirements for feature size and spacing,limitations of the plasma-etching process become apparent. For example,reactive-ion etching (RIE) is an etching technology that useschemically-reactive plasma to remove materials deposited on asemiconductor stack. The plasma is generated under low pressure by anelectromagnetic field. High-energy ions from the plasma attack thematerials of the semiconductor stack and react with them.

FIG. 1 is a schematic diagram showing an etching system ES, inaccordance with some embodiments of the present disclosure. In someembodiments, the etching system ES is an RIE system. The etching systemES includes at least a power source RF and a pair of electrodes E1, E2.In an RIE process, first, a semiconductor stack 20 is placed on a waferholder (not shown). Subsequently, several gases are introduced through agas inlet 22. A plasma 24 is used to strike the gas mixture using thepower source RF, breaking the gas mixture into energized ions. Theenergized ions are accelerated toward and react at the surface of thesemiconductor stack 20, forming another gaseous by-product.Subsequently, the gaseous by-product is evacuated through a vacuumsystem 26 to finish the reactive-ion etching.

Buried word lines in a semiconductor device involve a plurality of gateelectrodes and a plurality of buried word lines, wherein the gateelectrodes and the buried word lines are built in trenches in activeregions and isolation regions. Generally, the buried word lines areprocessed after the definition of active regions is finished, i.e.,after the shallow trench isolation (STI) process.

FIG. 2 is a top-view diagram of a DRAM device 10, in accordance withsome embodiments of the present disclosure. The DRAM device 10 includesan array region RA and a periphery region (not shown) on a substrate 12.The substrate 12 includes a plurality of active regions AA arranged withan isolation region BB. In some embodiments, the active regions AA maybe repetitively arranged at predetermined intervals and are isolatedfrom each other by the isolation region BB.

In some embodiments, the active regions AA are disposed parallel to eachother and extend along a first direction D1, as shown in FIG. 2. In someembodiments, the active regions AA are doped with various dopants toadjust electrical properties and form source regions (not shown) anddrain regions (not shown) therein. The source regions and drain regionsmay constitute a significant portion of the array region RA.

In some embodiments, multiple parallel buried word lines (not shown) ormultiple parallel bit lines (not shown) may be disposed in the arrayregion RA and pass through the active regions AA and the isolationregions BB. The buried word lines are disposed on the substrate 12 andextend along a second direction D2, which forms a predetermined angle θwith respect to the first direction D1. In some embodiments, thepredetermined angle θ is preferably less than 90 degrees. The bit linesare disposed on the substrate 12 and extend along a third direction D3orthogonal to the second direction D2. The first direction D1, thesecond direction D2 and the third direction D3 are all different fromeach other. In other words, the buried word lines and the bit lines arediagonally disposed with respect to the active regions AA.

FIGS. 3 and 4 are schematic cross-sectional views of a comparativeembodiment, wherein FIGS. 3 and 4 are taken along the line A-A′ in FIG.2. Referring to FIG. 3, a semiconductor structure 310 including anactive region AR is provided. The active region AR has a first topsurface SI. In addition, the active region AR includes multiple gatetrenches TA and multiple fin structures 16 arranged to alternate withthe gate trenches TA in the active region AR. The gate trenches TAinclude first gate trenches TA1 and second gate trenches TA2, which havedifferent diameters and different depths. The gate trenches TA arefilled with a dielectric material 14.

Referring to FIG. 4, with an aim to form buried word lines in thesemiconductor structure 310, an etch-back process is performed topartially remove the dielectric material 14 and form a recessed channel(not shown). The removal of the dielectric material 14 and the formationof the recessed channel are for the purpose of forming space for theaccommodation of a conductive material such as tungsten (W) or copper(Cu) to form buried word lines.

However, during the etch-back process in the comparative embodiment, thefin structures 16 are inevitably trimmed and the top portions of the finstructures 16 are rounded, as shown in FIG. 4. After the etch-backprocess, a semiconductor structure 320 is formed. The semiconductorstructure 320 includes multiple rounded fin structures 16, which isdisadvantageous for the electrical performance after the conductivematerial is deposited. Therefore, there is a great need to improve theetch-back process for the formation of buried word lines.

One aspect of the present disclosure provides a semiconductor structure.FIG. 5 is a schematic cross-sectional view of a semiconductor structure400, in accordance with some embodiments of the present disclosure. FIG.5 is taken along the line A-A′ in FIG. 2. In some embodiments, theformation of buried word lines begins after the active regions AA areformed.

The semiconductor structure 400 primarily includes the active region AA.The active region AA includes multiple gate structures in correspondingmultiple gate trenches GT, and multiple fin structures 134. The finstructure 134 has a substantially flat top surface S2. The gate trenchesGT include multiple first gate trenches GT1 and multiple second gatetrenches GT2 which have different diameters and different depths. Thesecond gate trench GT2 has a wider opening and a greater depth than thefirst gate trench GT1. The first gate trenches GT1 and the second gatetrenches GT2 are partially filled with a dielectric material 140. Thedielectric material 140 in the first gate trench GT1 has a top surfaceS3 substantially lower than the top surface S2 of the fin structure 134.The dielectric material 140 in the second gate trench GT2 has a topsurface S4 substantially lower than the top surface S3.

Another aspect of the present disclosure provides a method forfabricating a semiconductor structure. FIG. 6 is a flow diagram showinga method 200 for fabricating the semiconductor structure 400 in FIG. 5,in accordance with some embodiments of the present disclosure. FIG. 7 toFIG. 27 are schematic cross-sectional views showing sequentialfabrication stages according to the method 200 in FIG. 6, in accordancewith some embodiments of the present disclosure.

With reference to FIG. 7, a substrate 100 is provided according to stepS101 in FIG. 6. In some embodiments, the substrate 100 can be a singlecrystal silicon substrate, a polysilicon substrate, a compoundsemiconductor substrate such as a silicon germanium (SiGe) substrate, agallium arsenide (GaAs) substrate, a silicon-on-insulator (SOI)substrate or any other suitable substrate. The substrate 100 has a topsurface SI.

With reference to FIGS. 8 to 10, an active region definition process isperformed on the substrate 100 according to step S103 in FIG. 6. In someembodiments, the active region definition process is a shallow trenchisolation (STI) formation process, which defines at least an activeregion in the substrate 100. Specifically, the STI formation processincludes at least a lithographic process, an etching process, adeposition process and an ion implantation process.

Referring to FIG. 8, a first photoresist pattern (not shown) is formedon the top surface S1 of the substrate 100. In some embodiments, thefirst photoresist pattern is a positive tone photoresist (positivephotoresist), which is characterized by removal of exposed regions usinga developing solution. Next, the substrate 100 is etched using the firstphotoresist pattern as an etching mask to form an isolation trench TA.After the isolation trench TA is formed in the substrate 100, the firstphotoresist pattern is removed using an ashing process or a wet stripprocess.

Next, referring to FIG. 9, an isolation material 110 is deposited tofill the isolation trench TA. In some embodiments, the isolationmaterial 110 may include silicon dioxide (SiO₂), undoped silicate glass(USG) or other suitable materials and is deposited using a chemicalvapor deposition (CVD) process or a spin-on coating (SOC) process. Insome embodiments, a chemical mechanical polishing (CMP) process isperformed to remove the isolation material 110 above the top surface S1of the substrate 100. After the isolation trench TA is filled with theisolation material 110, an isolation region BB is formed.

Subsequently, referring to FIG. 10, an ion implantation process isperformed on the substrate 100. In some embodiments, a dopant 120 isimplanted into the substrate 100 to form an active region AA surroundedby the isolation region BB in the substrate 100. The active region AAhas the top surface SI. In some embodiments, the active region AA may bea p-type doped region when the dopant 120 includes boron (B), gallium(Ga) or indium (In). In other embodiments, the active region AA may bean n-type doped region when the dopant 120 includes phosphorus (P) orarsenic (As). After the ion implantation process, an annealing processmay be performed to repair the damage caused by the implantation andactivate the dopant 120.

With reference to FIG. 11 to FIG. 13, a gate trench formation process isperformed on the active region AA according to step S105 in FIG. 6.Specifically, the gate trench formation process includes at least alithographic process, an etching process and a deposition process.

Referring to FIG. 11, a second photoresist pattern 122 is formed on thetop surface SI of the active region AA. The second photoresist pattern122 is used to define the location of a gate trench to be formed. Insome embodiments, the second photoresist pattern 122 includes chemicalamplifier (CA) photoresist. The CA photoresist includes a photoacidgenerator (PAG) that can be decomposed to form acids during alithography exposure process. More acids can be generated as a result ofa catalytic reaction.

Next, referring to FIG. 12, the active region AA is etched using thesecond photoresist pattern 122 as an etching mask to form multiple gatetrenches GT. In addition, multiple first fin structures 130 of theactive region AA are formed simultaneously with the gate trenches GT.The first fin structures 130 have the top surface S1.

After the gate trenches GT are formed in the active region AA, thesecond photoresist pattern 122 is removed using an ashing process or awet strip process. In some embodiments, the gate trenches GT includefirst gate trenches GT1 and second gate trenches GT2 which havedifferent diameters and different depths. The second gate trench GT2 hasa wider opening and a greater depth than the first gate trench GT1. Insome embodiments, the different dimensions of the first gate trench GT1and the second gate trench GT2 are caused by the etching proximityeffect. That is, a gate trench having a wider opening is etched moreefficiently, thereby having a greater depth after the etching process.

Subsequently, referring to FIG. 13, a dielectric material 140 isdeposited to fill the gate trenches GT. In some embodiments, thedielectric material 140 may include silicon dioxide (SiO₂) or othersuitable materials and is deposited using a CVD process or an atomiclayer deposition (ALD) process. In some embodiments, a CMP process isperformed to remove the dielectric material 140 above the top surface S1of the active region AA to expose the first fin structures 130. At suchtime, a semiconductor structure 300 is generally formed. The gatetrenches GT filled with the dielectric material 140 are configured toform buried word line structures.

FIG. 14 is an illustrative perspective view of the semiconductorstructure 300, in accordance with some embodiments of the presentdisclosure. In some embodiments, the first fin structures 130 have afirst height H1 substantially equal to the thickness of the activeregion AA. In the perspective view, the first gate trenches GT1 filledwith the dielectric material 140 are arranged to alternate with thesecond gate trenches GT2 filled with the dielectric material 140 alongthe second direction D2. In addition, the first fin structures 130 arearranged to alternate with the gate trenches GT.

With reference to FIGS. 15 to 17, a first etch-back process is performedon the active region AA according to step S107 in FIG. 6. The firstetch-back process includes at least a lithographic process and anetching process.

Referring to FIG. 15, a third photoresist pattern 142 is formed on thetop surface SI to cover portions of the active region AA. Next,referring to FIG. 16, which is a schematic perspective view of thesemiconductor structure 300 after the first etch-back process, inaccordance with some embodiments of the present disclosure, thesemiconductor structure 300 is etched using the third photoresistpattern 142 as an etching mask to form a shallow first recessed channelCH1. Specifically, portions of the dielectric material 140 and first finstructures 130 exposed by the third photoresist pattern 142 are etched.In some embodiments, a portion of the top surface SI is scooped out toform the first recessed channel CH1. As a result, top portions of thefirst fin structures 130 are concavely shaped and a plurality of secondfin structures 132 are formed. In some embodiments, the first recessedchannel CH1 extends along the second direction D2.

FIG. 17 is a schematic cross-sectional view of the semiconductorstructure 300 in FIG. 16, in accordance with some embodiments of thepresent disclosure. The second fin structure 132 includes a hollowportion R1 and a protruding portion P1. In some embodiments, the hollowportion R1 is a recess formed by the first etch-back process. Theprotruding portion P1, which has concave top surface SR, is a portionremained at the top of the second fin structure 132. In someembodiments, the protruding portion P1 is not limited to any profile.After the first etch-back process, a second height H2 of the second finstructure 132 is substantially less than the first height H1 of thefirst fin structure 130.

With reference to FIG. 18 to FIG. 25, a hard mask is formed on theactive region AA according to step S109 in FIG. 6. Referring to FIG. 18,in some embodiments, multiple layers are sequentially formed on theactive region AA. First, a cap layer 150L is formed on the top surfaceS1. The cap layer 150L completely covers the dielectric material 140 inthe gate trenches GT. In some embodiments, the cap layer 150L is made ofdielectric materials such as silicon nitride, silicon oxide, siliconoxynitride, or a combination thereof.

Next, a mask layer 160L is formed on the cap layer 150L. In someembodiments, the mask layer 160L mainly includes carbon materials and isused as a hard mask. Subsequently, an antireflective coating (ARC) layer170L may be optionally formed on the mask layer 160L, followed by aphotoresist layer 180L formed on the ARC layer 170L. In someembodiments, the ARC layer 170L can minimize the optical reflection ofthe photoresist layer 180L when the photoresist layer 180L isirradiated. In some embodiments, the ARC layer 170L is formed using aspin-coating process.

In some embodiments, the photoresist layer 180L includes chemicalamplifier (CA) photoresist. The CA photoresist includes a photoacidgenerator (PAG) that can be decomposed to form acids during alithography exposure process. More acids can be generated as a result ofa catalytic reaction. At such time, the cap layer 150L, the mask layer160L, the ARC layer 170L and the photoresist layer 180L together form amultilayer film 200 on the active region AA.

FIG. 19 is a schematic cross-sectional view of the semiconductorstructure in FIG. 18, in accordance with some embodiments of the presentdisclosure. In some embodiments, the cap layer 150L covers the topsurface S1 of the dielectric material 140 and the top surface SR of thesecond fin structure 132. As a result, a portion of the cap layer 150Lfills the hollow portion R1.

Referring to FIG. 20, a lithography process is performed on thephotoresist layer 180L. The photoresist layer 180L is exposed to aradiation by 1 using a photomask MA and a lithography system (notshown). In some embodiments, the radiation hv1 may include, but is notlimited to, deep ultraviolet (DUV) radiation. The photomask MA includesmultiple transparent portions T1 and multiple opaque portions O1.

In some embodiments, the photomask MA may be a binary mask, a phaseshift mask or any other type of mask suitable for use in the lithographysystem. The exposure induces a photochemical reaction that changes thechemical property of portions of the photoresist layer 180L. Forexample, portions of the photoresist layer 180L corresponding to thetransparent portions T1 are exposed and become more reactive to adeveloping process. In some embodiments, a post-exposure baking (PEB)may be performed after the photoresist layer 180L is exposed.

Referring to FIG. 21, an appropriate developing agent is used to rinsethe exposed photoresist layer 180L. In some embodiments, exposedportions of the photoresist layer 180L are reacted with the developingagent and can be easily removed. After the exposed photoresist layer180L is developed, a photoresist pattern 180 comprising multiplephotoresist features 180A and multiple openings 180B arranged with thephotoresist features 180A is formed. In some embodiments, thephotoresist features 180A and the openings 180B respectively correspondto the opaque portions O1 and the transparent portions T1 of thephotomask MA. In some embodiments, portions of the ARC layer 170L arecovered by the photoresist features 180A.

Referring to FIG. 22, a first etching is performed on the ARC layer170L. In some embodiments, the first etching can be an RIE process,which anisotropically etches portions of the ARC layer 170L exposed bythe openings 180B. Therefore, an ARC pattern 170 comprising multiple ARCfeatures 170A and multiple openings 170B arranged with the ARC features170A is formed. In some embodiments, the ARC features 170A and theopenings 170B are respectively connected to the photoresist features180A and the openings 180B. In some embodiments, portions of the masklayer 160L are covered by the ARC features 170A.

Referring to FIG. 23, a second etching is performed on the mask layer160L. Specifically, the mask layer 160L is etched using the photoresistfeatures 180A as an etching mask. In some embodiments, the secondetching can be an RIE process, which anisotropically removes portions ofthe mask layer 160L exposed by the openings 170B. Therefore, a maskpattern 160 comprising multiple mask features 160A and multiple openings160B arranged with the mask features 160A is formed. In someembodiments, the mask features 160A and the openings 160B arerespectively connected to the ARC features 170A and the openings 170B.In some embodiments, portions of the cap layer 150L are covered by themask features 160A.

Referring to FIG. 24, the photoresist pattern 180 and the ARC pattern170 are removed prior to the subsequent process. In some embodiments,the removal may use an ashing process or a wet strip process.

Referring to FIG. 25, a third etching is performed on the cap layer150L. Specifically, the cap layer 150L is etched using the mask features160A as an etching mask. In some embodiments, the third etching can bean RIE process, which anisotropically removes portions of the cap layer150L exposed by the openings 160B. Therefore, a cap pattern 150comprising multiple cap features 150A and multiple openings 150Barranged with the cap features 150A is formed. In some embodiments, thecap features 150A and the openings 150B are respectively connected tothe mask features 160A and the openings 160B. In some embodiments, thedielectric material 140 is exposed by the openings 150B. In someembodiments, the cap pattern 150 and the mask pattern 160 together mayform a hard mask HM1 on the active region AA.

With reference to FIG. 26, a second etch-back process is performed onthe active region AA according to step S111 in FIG. 6. Specifically,portions of the dielectric material 140 exposed by the hard mask HM1 areetched. In some embodiments, the protruding portion P1 of the second finstructure 132 (as shown in FIG. 16) formed in the first etch-backprocess and the dielectric material 140 are etched at the same time inthe second etch-back process. The protruding portion P1 of the secondfin structure 132 is ground such that a third fin structure 134 having asubstantially flat top surface S2 lower than the top surface S1 of theactive region AA is formed.

In some embodiments, the dielectric material 140 in the first gatetrench GT1 has a top surface S3 substantially lower than the top surfaceS2 of the third fin structure 134. In addition, the dielectric material140 in the second gate trench GT2 has a top surface S4 substantiallylower than the top surface S3. The hard mask HM1 is removed using anashing process or a wet strip process after the second etch-backprocess. At such time, recesses within the gate trenches GT are formedand a semiconductor structure 400 is generally formed. Subsequently, adeposition process of conductive material will be performed on thesemiconductor structure 400 to form buried word line structures.

In some embodiments, the second etch-back process uses an etching systemwhich employs a plasma with a bias power of 200 to 300 watts (W) and anon-off frequency of 100 to 300 hertz (Hz). The on-off frequency refersto the plasma being switched on and off within one second. In someembodiments, a period ratio of the on and off states of the plasma maybe between 70:30 and 50:50. According to the aforementioned method, theetching selectivities of the dielectric material, which primarilyincludes silicon dioxide (SiO₂), and the fin structures, which primarilyincludes silicon, can be adjusted.

FIG. 27 is a schematic perspective view of the semiconductor structure400, in accordance with some embodiments of the present disclosure. Insome embodiments, a second recessed channel CH2 cutting through thedielectric material 140 and the third fin structures 134 is formed afterthe second etch-back process. The second recessed channel CH2 extendsalong the second direction D2. In some embodiments, the third finstructures 134 have a third height H3 substantially lower than the firstheight H1 or the second height H2 shown in FIG. 17.

One aspect of the present disclosure provides a semiconductor structure.The semiconductor structure comprises an active region. A gate trench isdisposed in the active region, wherein the gate trench includes a firstgate trench and a second gate trench. A fin structure having asubstantially flat first top surface is arranged in a manner alternatingwith the gate trench. A dielectric material deposited in the first gatetrench has a second top surface. A dielectric material deposited in thesecond gate trench has a third top surface. The second top surface andthe third top surface are lower than the first top surface.

Another aspect of the present disclosure provides a method of forming asemiconductor structure. The method comprises providing a substrateincluding an isolation region, an active region adjacent to theisolation region and a first top surface; forming a plurality of gatetrenches and a plurality of first fin structures arranged to alternatewith the gate trenches in the active region; filling the gate trencheswith a dielectric material; forming a first photoresist pattern on theactive region; performing a first etching process to partially removethe first fin structures to form a plurality of second fin structures,wherein the second fin structures have a top member with a hollowportion and a protruding portion; forming a hard mask on the activeregion; and performing a second etching process to remove a portion ofthe dielectric material and the protruding portion such that a pluralityof third fin structures are formed, the third fin structures having asubstantially flat second top surface.

Compared with the comparative embodiment shown in FIG. 4, which showsfin structures having a rounded top surface after a single etch-backprocess, the present disclosure provides a method of forming finstructures having a substantially flat top surface after a combinationof etch-back processes. After a first etch-back process, a first finstructure is processed to form a second fin structure having aprotruding portion and a hollow portion. The protruding portion of thesecond fin structure prevents the fin structure from being rounded (asshown in FIG. 4) in a second etch-back process. The profile of the finstructures of the present disclosure contributes to a desired electricalproperty of the buried word line structures subsequently formed.

Although the present disclosure and its advantages have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made herein without departing from the spirit andscope of the disclosure as defined by the appended claims. For example,many of the processes discussed above can be implemented in differentmethodologies and replaced by other processes, or a combination thereof.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the present disclosure, processes, machines,manufacture, compositions of matter, means, methods, or steps, presentlyexisting or later to be developed, that perform substantially the samefunction or achieve substantially the same result as the correspondingembodiments described herein, may be utilized according to the presentdisclosure. Accordingly, the appended claims are intended to includewithin their scope such processes, machines, manufacture, compositionsof matter, means, methods, and steps.

What is claimed is:
 1. A semiconductor structure, comprising: asubstrate defined with an active region; a first gate structure disposedin the active region and including a dielectric material; a second gatestructure disposed in the active region and including the dielectricmaterial; and a fin structure having a first top surface arranged toalternate with the first gate structure and the second gate structure,wherein the first gate structure has a second top surface, the secondgate structure has a third top surface, and the second top surface andthe third top surface are lower than the first top surface.
 2. Thesemiconductor structure according to claim 1, wherein the third topsurface is lower than the second top surface.
 3. The semiconductorstructure according to claim 1, wherein the second gate structure isdeeper than the first gate structure.
 4. The semiconductor structureaccording to claim 1, wherein the first gate structure and the secondgate structure have different diameters and different depths.
 5. Amethod of forming a semiconductor structure, comprising: forming a gatetrench and a first fin structure adjacent to the gate trench in anactive region of a substrate; filling the gate trench with a dielectricmaterial; forming a first photoresist pattern on the active region;performing a first etching process to partially remove the first finstructure to form a second fin structure, wherein the second finstructure has a protruding portion; forming a hard mask on the activeregion; and performing a second etching process to remove a portion ofthe dielectric material and the protruding portion of the second finstructure to form a third fin structure.
 6. The method according toclaim 5, wherein the forming of the gate trench comprises forming afirst gate trench adjacent to a second gate trench, wherein the firstgate trench and the second gate trench are arranged along a firstdirection.
 7. The method according to claim 6, wherein the second gatetrench is formed to be deeper than the first gate trench.
 8. The methodaccording to claim 6, wherein the forming of the gate trench comprisesforming the first gate trench and the second gate trench to havedifferent diameters and different depths.
 9. The method according toclaim 6, wherein the performing of the first etching process comprisesforming a first recessed channel extending along the first direction.10. The method according to claim 9, wherein after the first etchingprocess, a second height of the second fin structure is substantiallyless than a first height of the first fin structure.
 11. The methodaccording to claim 5, wherein the formation of the hard mask comprises:forming a cap layer to cover the active region; forming a mask layer onthe cap layer; forming an anti-reflective coating (ARC) layer on themask layer; and forming a second photoresist pattern on the ARC layer.12. The method according to claim 6, wherein the mask layer is etchedusing the second photoresist pattern as an etching mask to form a maskpattern.
 13. The method according to claim 7, wherein the cap layer isetched using the mask pattern as an etching mask to form a cap pattern.14. The method according to claim 8, wherein the cap pattern and themask pattern together form the hard mask on the active region.
 15. Themethod according to claim 9, wherein the performing of the secondetching process comprises grinding the protruding portion of the secondfin structure.
 16. The method according to claim 9, wherein after thesecond etching process, a third height of the third fin structure issubstantially less than a second height of the second fin structure. 17.The method according to claim 9, wherein the performing of the secondetching process comprises forming a second recessed channel extendingalong the first direction.
 18. The method according to claim 9, whereinthe second recessed channel cuts through the dielectric material and thethird fin structure.
 19. The method according to claim 9, wherein thesecond etching process uses an etching system which employs a plasmawith a bias power of 200 to 300 watts and an on-off frequency of 100 to300 hertz.
 20. The method according to claim 19, wherein in the secondetching process, a period ratio of the on and off states of the plasmais between 70:30 and 50:50.